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| VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 Features * Integrated Photodetector/Transimpedance Amplifier Family Optimized for High Speed Optical Communications Applications * Integrated AGC * Fibre Channel and Gigabit Ethernet Photodetector/Transimpedance Amplifier Family for Optical Communication * High Bandwidth * Low Input Noise Equivalent Power * Single 5V Supply Part Number VSC7710 Data Rate (Gb/s) 1.25 Bandwidth (MHz) 1300 Input Noise (W rms) .22 Optically Active Area (m diameter) 75 General Description The VSC7710 integrated PIN Photodetector/Transimpedance Amplifiers provides a highly integrated solution for converting 1300 nm light from a fiber optic communications channel into a differential output voltage. The benefits of Vitesse Semiconductor's Gallium Arsenide H-GaAs-III process are fully utilized to provide a very high bandwidth and low noise amplifier. The PIN detector is 75m in diameter. The detector bias is supplied internally eliminating the need for a separate bias connection. The sensitivity, duty cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are available in flatwindowed or lensed packages. The use of a photodetector and transimpedance amplifier hybrid, reduces the input capacitance, resulting in higher sensitivity and bandwidth and improved speed of response. These parts can easily be used in developing Fibre Channel and Gigabit Ethernet electro-optic Receivers for the 900-1600 nm spectral range which exhibit very high performance and ease of use. VSC7710 Block Diagram +5V + _ D0 D1 G52139-0, Rev 2.2 04/02/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 1 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Table 1: Electro-Optic Specifications Symbol VDD fc Tr Tf S Dr Ro Vd PSRR Is BW Rd Vn NEPO PDJ DCD yV Wavelength Low Frequency Cutoff Rise/Fall Time Sensitivity Dynamic Range Single Ended Output Impedance Differential Output Voltage Power Supply Rejection Ratio Supply Current Optical Modulation Bandwidth Differential Responsivity Output Noise Voltage Input Noise Equivalent Optical Power Pattern Dependent Jitter Duty Cycle Distortion Bias Offset Voltage 700 2.5 -28 25 25 0.25 35 62 90 Advance Product Information VSC7710 Min 4.5 1270 Parameter Supply Voltage Typ Max 5.5 1355 1.4 300 Units V nm MHz ps dBm dB 3/4 V dB mA MHz mV/W Conditions -3dB P = -22dBm, fr = 50MHz 20% to 80% P = -3 dBm BER 10-12 B = 1063Mb/s 1.2 P = -3 dBm, R = 100 f = 0.3MHz - 40MHz Hybrid Differential P = -28 to -3 dBm -3dB P = -22dBm, fr = 50MHz = 100 P = -22dBm fr = 50MHz BW = 1500MHz, P = 0mW BW = 1500MHz, P = 0mW P = -3dBm 10% Voltage Window P = -3dBm P = -3dBm 1300 1.2 0.22 60 5 200 mVRMS W RMS ps % mV Page 2 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 Photodetector/Transimpedance Amplifier Family for Optical Communication Figure 1: Amplitude vs. Frequency Frequency response of VSC7710WB (Upper 3db frequency is measured with respect to response at 50 MHz) Table 2: Absolute Maximum Ratings Symbol VDD Tstg Pinc Power Supply Storage Temperature Incident Optical Power Parameter 6V Limits -55C to 125C (case temperature under bias) +3 dBm Table 3: Recommended Operating Conditions Symbol VDD Top Power Supply Operating Temperature Parameter 4.5-5.5V (5.0V nominal) Limits 0C (ambient) to 70C case G52139-0, Rev 2.2 04/02/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 3 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Advance Product Information VSC7710 Description Data output normal (with reference to incident light) Data output complement (inverting) (with reference to incident light) Power supply Ground (package case) Table 4: Pin Table Specifications for TO-46(ball lens), TO-56 (flat window) Packages and Bare Die Symbol D OUT D-OUT VDD GND + Note: Pin Diagram is identical for both TO-46 and TO-56 package styles. Figure 2: Pin Diagram VDD D+OUT D-OUT GND Figure 3: Schematic View of Bare Die Pad Assignments ANODE D-OUT GND GND CATHODE VDD D+OUT ANODE VDD Page 4 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 Thermal Resistance Calculation Photodetector/Transimpedance Amplifier Family for Optical Communication In order to relate the junction temperature to an equivalent case temperature, the following thermal characteristics of the package are provided (note that the thermal conductivity is identical for TO-46 and TO-56 package styles). Table 5: Thermal Resistance Calculation for TO-56 and TO-46 Packages. Chip Size Chip Area A Die height (Tdie) Epoxy thickness (Tepoxy) Header thickness (Theader) (ave. for TO-46 and TO-56) 0.168cm x 0.104cm 0.015 cm 2 Thermal Path 0.066 cm 0.0076 cm 0.115 cm TJ GaAs EXPOXY Thermal Conductivities K GaAs K epoxy K kovar 0.55W / cm C 0.0186W / cm C 0.17W / cm C KOVAR TC GaAs epoxy kovar = Tdie KGaAsA Tepoxy KepoxyA Tkovar KkovarA = 0.066 0.55 x 0.015 = 8 C/W = = 0.0076 0.0186 x 0.015 = 27.24 C/W = = 0.12 0.17 x 0.015 = 47 C/W JC = Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24 C/W Example: For VSC7710 at nominal supply current of 25mA and VDD = 5V Temperature rise from junction to case = 0.025A x 5V x 82.24 C/W = 10.28 C G52139-0, Rev 2.2 04/02/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 5 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Figure 4: Eye Diagram Advance Product Information VSC7710 Page 6 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 Photodetector/Transimpedance Amplifier Family for Optical Communication Notes on Measurement Conditions and Applications Note 1: Noise Measurement Method 3GHz BW Hybrid Coupler P1 DUT Board P2 Power Meter HP 437B with 8481D Power Sensor RMS Output Noise The noise voltage, (Vn), is calculated from the Output Noise Power, (Pn), into 50 ohm. Vn = Pn * 50 The noise voltage, Vn, at the output is referred back to the noise power at the input through the responsivity R (with R in volts/watts) Vn NEP = -----R The bit error rate can be expressed as: BER = e(-Q2/2) 2Q For a BER = 1 x10 - 12 the parameter Q = 7 - 12 The sensitivity(s) at a bit error rate of 1 x10 is calculated as follows: S = 10 log10 NEP (Q 1mW ) , where the NEP is in units of milliwatts and S is in dBm, respectively. G52139-0, Rev 2.2 04/02/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 7 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Advance Product Information VSC7710 Note 2:Measurement Setup for Frequency Response Lightwave Component Analyzer HP8702 Hybrid Coupler DC1 AC1 Bias T AC2 Bias T Laser Optical Attenuator DC2 DUT Power Supply Note 3:Bias T Schematic DC Out Signal AC Out Page 8 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 Package Information Hybrid Die Photodetector/Transimpedance Amplifier Family for Optical Communication G52139-0, Rev 2.2 04/02/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 9 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Table 6: Die Pad Descriptions Pad Number 1 2 3 4 5 6 7 8 9 10 Advance Product Information VSC7710 Pad Name ANODE CLON VDD VGND CLOP ANODE CATHODE VGND VDD CATHODE Pad Locations X 104.5 71.7 71.7 790 790 765.9 764.3 595.4 258 428.5 Y 880 1440.6 1601.2 1602.1 1441.1 781.2 595.8 55 55 530.5 Pad Size 110 x 110 110 x 110 110 x 110 110 x 110 110 x 110 110 x 110 110 x 201 246 x 110 246 x 110 522 x 522 Pass Opening 89 x 89 89 x 89 89 x 89 89 x 89 89 x 89 89 x 89 89 x 180 223 x 86 223 x 86 310 x 310 Pad Finish Gold Gold Gold Gold Gold Gold Gold Gold Gold Gold Finish Thickness 1500 A 1500 A 1500 A 1500 A 1500 A 1500 A 1500 A 1500 A 1500 A 1500 A Page 10 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 To-56 Flat Window Photodetector/Transimpedance Amplifier Family for Optical Communication Reference Isometric G52139-0, Rev 2.2 04/02/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 11 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Advance Product Information VSC7710 To-46 Ball Lens--7mm Lead Length Reference Isometric Page 12 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7710 TO-46 Ball Lens--13mm Lead Length Photodetector/Transimpedance Amplifier Family for Optical Communication Reference Isometric G52139-0, Rev 2.2 04/02/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 13 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Advance Product Information VSC7710 Ordering Information The order number for this product is formed by a combination of the device type and package type. VSC7710 xx Device Type Photodetector/Transimpedance Amplifier Family for Optical Communication Package WB: TO-56 Flat Window WC: TO-46 Ball Lens--7mm Lead Length WD: TO-46 Ball Lens--13mm Lead Length X: Bare Dice Notice Vitesse Semiconductor Corporation ("Vitesse") provides this document for informational purposes only. This document contains pre-production information about Vitesse products in their concept, development and/or testing phase. All informaiton in this document, including descriptions of features, functions, performance, technical specifications and availability, is subject to change without notice at any time. Nothing contained in this document shall be construed as extending any warranty or promise, express or implied, that any Vitesse product will be available as described or will be suitable for or will accomplish any particular task. Vitesse products are not intended for use in life support appliances, devices or systems. Use of a Vitesse product in such applications without written consent is prohibited. Page 14 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52139-0, Rev 2.2 04/02/01 |
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